با استفاده از جداول CN20 و با فرض می توان کدهای Netlist در HSPICE را اینگونه نوشت:

* Parameters and models

*————————————————————————

* Level 2 model nchan model for CN20

.MODEL CMOSN NMOS LEVEL=2 PHI=0.600000 TOX=4.3500E-08 XJ=0.200000U TPG=1

+ VTO=0.8756 DELTA=8.5650E+00 LD=2.3950E-07 KP=4.5494E-05

+ UO=573.1 UEXP=1.5920E-01 UCRIT=5.9160E+04 RSH=1.0310E+01

+ GAMMA=0.4179 NSUB=3.3160E+15 NFS=8.1800E+12 VMAX=6.0280E+04

+ LAMBDA=2.9330E-02 CGDO=2.8518E-10 CGSO=2.8518E-10

+ CGBO=4.0921E-10 CJ=1.0375E-04 MJ=0.6604 CJSW=2.1694E-10

+ MJSW=0.178543 PB=0.800000

* Weff = Wdrawn – Delta_W

* The suggested Delta_W is -4.0460E-07

* Level 2 model pchan model for CN20

.MODEL CMOSP PMOS LEVEL=2 PHI=0.600000 TOX=4.3500E-08 XJ=0.200000U TPG=-1

+ VTO=-0.8889 DELTA=4.8720E+00 LD=2.9230E-07 KP=1.5035E-05

+ UO=189.4 UEXP=2.7910E-01 UCRIT=9.5670E+04 RSH=1.8180E+01

+ GAMMA=0.7327 NSUB=1.0190E+16 NFS=6.1500E+12 VMAX=9.9990E+05

+ LAMBDA=4.2290E-02 CGDO=3.4805E-10 CGSO=3.4805E-10

+ CGBO=4.0305E-10 CJ=3.2456E-04 MJ=0.6044 CJSW=2.5430E-10

+ MJSW=0.244194 PB=0.800000

* Weff = Wdrawn – Delta_W

* The suggested Delta_W is -3.6560E-07

.GLOBAL vdd gnd

.PARAM supply=5

.TEMP 27

* Subcircuits

*————————————————————————

.SUBCKT inverter in out

M1 out in gnd gnd CMOSN L=2u W=10u

M2 out in vdd vdd CMOSP L=2u W=10u

.ENDS

* Simulation netlist

*————————————————————————

Vdd vdd gnd ‘supply’

X1 e a inverter

X2 a b inverter

X3 b c inverter

X4 c d inverter

X5 d e inverter

* Stimulus

*————————————————————————

.IC v(a)=’supply’

.MEASURE tpdr                                                                                   * rising prop delay

+     TRIG v(a)  VAL=’supply/2′ FALL=1

+     TARG v(b) VAL=’supply/2′ RISE=1

.MEASURE tpdf                                                                                   * falling prop delay

+     TRIG v(a) VAL=’supply/2′ RISE=1

+     TARG v(b) VAL=’supply/2′ FALL=1

.MEASURE frq param=’1/(5*(tpdr+tpdf))’                                          * frq(Hz) calc

.MEASURE avgpwrdb AVG P(vdd) FROM=0 TO=2422.8465p             * avgpwr(dbW) calc

.MEASURE avgpwr param=’pwr(10,(avgpwrdb*100))’                      * avgpwr(mW) calc

.MEASURE pdp param='(avgpwr/1000)*(tpdr+tpdf)’                                    * pdp( ) calc

.TRAN 0.001n 5n

.OPTION POST PROBE

.PROBE V(a)

.END

خروجی های مدار پس ار شبیه سازی به صورت زیر حاصل شد:

***** job concluded

****** transient analysis tnom= 25.000 temp= 27.000 *****

tpdr= 278.9878p targ= 360.3562p   trig= 81.3684p

tpdf= 205.5815p targ=   1.5668n   trig=   1.3612n

frq= 412.7377x

avgpwrdb= -2.9161m from=   0.         to=   2.4228n

avgpwr= 510.9661u

pdp= 247.5985f

فیلم آموزش فارسی HSPICE

نوشته شبیه سازی اسیلاتور حلقوی 5 طبقه با استفاده از HSPICE در تکنولوژی 50nm پروسه CN20 اولین بار در ايران متلب. پدیدار شد.